- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11575 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the boundary region between the core and peripheral circuit regions
Patent holdings for IPC class H01L 27/11575
Total number of patents in this class: 943
10-year publication summary
8
|
65
|
108
|
144
|
183
|
157
|
133
|
106
|
68
|
2
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 131630 |
247 |
Kioxia Corporation | 9847 |
148 |
Sandisk Technologies LLC | 5684 |
134 |
Micron Technology, Inc. | 24960 |
126 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
79 |
SK Hynix Inc. | 11030 |
76 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
22 |
Macronix International Co., Ltd. | 2562 |
14 |
Tokyo Electron Limited | 11599 |
13 |
Intel Corporation | 45621 |
9 |
Applied Materials, Inc. | 16587 |
9 |
Lodestar Licensing Group LLC | 583 |
8 |
Renesas Electronics Corporation | 6305 |
6 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
6 |
ASM IP Holding B.V. | 1715 |
5 |
Longitude Flash Memory Solutions Ltd. | 297 |
5 |
Intel NDTM US LLC | 373 |
5 |
Sony Semiconductor Solutions Corporation | 8770 |
4 |
Tokyo Electron U.S. Holdings, Inc | 608 |
4 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
3 |
Other owners | 20 |